- STT (spin transfer torque)
- SAP.тех. перенос спинового момента
Универсальный англо-русский словарь. Академик.ру. 2011.
STT (spin transfer torque)
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Spin torque transfer — writing technology is a technology in which data is written by aligning the spin direction of the electrons flowing through a TMR (tunneling magneto resistance) element. Data writing is performed by using a spin polarized current with the… … Wikipedia
STT — may refer to:* Cyril E. King Airport, an airport on St. Thomas in the U.S. Virgin Islands * Soft tissue therapy, a kind of massage * Spin torque transfer, a computer hardware technology * Spinothalamic tract, a sensory pathway originating in the… … Wikipedia
Magnetoresistive random access memory — Computer memory types Volatile RAM DRAM (e.g., DDR SDRAM) SRAM In development T RAM Z RAM TTRAM Historical Delay line memory Selectron tube Williams tube Non volatile … Wikipedia
Magnetoresistive Random Access Memory — (MRAM) is a non volatile computer memory (NVRAM) technology, which has been under development since the 1990s. Continued increases in density of existing memory technologies ndash; notably Flash RAM and DRAM ndash; kept MRAM in a niche role in… … Wikipedia
Memristor — Type Passive Working principle Memristance Invented Leon Chua (1971) First production HP Labs (2008) Electronic symbol … Wikipedia
Magnetic Random Access Memory — La mémoire MRAM (Magnetic Random Access Memory) est une mémoire non volatile de type magnétique. Sommaire 1 Type de mémoire 2 Présentation 3 Technique … Wikipédia en Français
MRAM — La MRAM (RAM magnetorresistiva o magnética) es un tipo de memoria no volátil desarrollada desde los años 90. El desarrollo de la tecnología existente, principalmente Flash y DRAM han evitado la generalización de su uso, aunque sus defensores… … Wikipedia Español
Spintronics — (a neologism meaning spin transport electronics [1][2]), also known as magnetoelectronics, is an emerging technology that exploits both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental… … Wikipedia
Магниторезистивная оперативная память — Типы компьютерной памяти Энергозависимая DRAM (в том числе DDR SDRAM) SRAM Перспективные T RAM Z RAM TTRAM Из истории Память на линиях задержки Запоминающая электронстатическая трубка Запоминающая ЭЛТ Энергонезависимая … Википедия
Tunnel magnetoresistance — Magnetic tunnel junction (schematic) The Tunnel magnetoresistance (TMR) is a magnetoresistive effect that occurs in magnetic tunnel junctions (MTJs). This is a component consisting of two ferromagnets separated by a thin insulator. If the… … Wikipedia
Спинтроника — (Спиновая электроника) раздел квантовой электроники, занимающийся изучением спинового токопереноса (спин поляризованного транспорта) в твердотельных веществах, в частности в гетероструктурах ферромагнетик парамагнетик или ферромагнетик… … Википедия
